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| TSM5ND50 500V N-Channel Power MOSFET TO-252 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 500 RDS(on)() 1.5 @ VGS =10V ID (A) 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features Low gate charge typical @ 20nC Low Crss typical @ 17pF Fast Switching 100% avalanche tested Improved dv/dt capability ESD Protection Block Diagram Ordering Information Part No. TSM5ND50CP RO Package TO-252 Packing 2,500pcs / 13" Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Peak Diode Recovery (Note 2) Single Pulse Drain to Source Avalanche Energy (Note 3) Total Power Dissipation @Ta = 25 C Operating Junction and Storage Temperature Range o Symbol VDS VGS ID IDM IS dv/dt EAS PDTOT TJ, TSTG Limit 500 30 4.4 17.6 4.4 4.5 130 70 -55 to +150 Unit V V A A A V/ns mJ W o C Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t 10sec Symbol RJC RJA Limit 1.78 62.5 Unit o o C/W C/W 1/8 Version: C07 TSM5ND50 500V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Dynamic b Conditions VGS = 0V, ID = 250uA VGS = 10V, ID = 2.2A VDS = VGS, ID = 250uA VDS = 500V, VGS = 0V VGS = 20V, VDS = 0V VDS = 15V, ID = 2.2A Symbol BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs Qg Qgs Qgd Ciss Coss Crss td(on) Min 500 -3.0 ------------------- Typ -1.2 ---3.1 20 4 10 535 75 17 21.6 11.7 14.5 4.5 -0.82 310 1425 9.2 Max -1.5 4.5 1 10 -----------4.4 1.2 ---- Unit V V uA uA S Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching c VDS = 250V, ID = 4.4A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source Drain Diode Source-drain Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Notes: 1. Pulse test: pulse width 300uS, duty cycle 2% 2. ISD<4.4A, di/dt<200A/us, VDD nS A V nS uC uC 2/8 Version: C07 TSM5ND50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/8 Version: C07 TSM5ND50 500V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 4/8 Version: C07 TSM5ND50 500V N-Channel Power MOSFET Unclamped Inductive Load Test Circuit and Waveform Switching Time Test Circuits for Resistive Load Gate Charge Test Circuit 5/8 Version: C07 TSM5ND50 500V N-Channel Power MOSFET Test Circuit for Inductive Load Switching and Diode Recovery Times 6/8 Version: C07 TSM5ND50 500V N-Channel Power MOSFET SOT-252 Mechanical Drawing TO-252 DIMENSION DIM A A1 B C D E F G G1 G2 H I J K L M MILLIMETERS MIN MAX 2.3BSC 4.6BSC 6.80 5.40 6.40 2.20 0.00 5.20 0.75 0.55 0.35 0.90 2.20 0.50 0.90 1.30 7.20 5.60 6.65 2.40 0.20 5.40 0.85 0.65 0.65 1.50 2.80 1.10 1.50 1.70 INCHES MIN MAX 0.09BSC 0.18BSC 0.268 0.213 0.252 0.087 0.000 0.205 0.030 0.022 0.014 0.035 0.087 0.020 0.035 0.051 0.283 0.220 0.262 0.094 0.008 0.213 0.033 0.026 0.026 0.059 0.110 0.043 0.059 0.67 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 7/8 Version: C07 TSM5ND50 500V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8/8 Version: C07 |
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